photo-induced catalytic characteristics of tio2 thin films deposited by dc reactive magnetron sputtering 直流反应磁控溅射制备二氧化钛薄膜的光催化性研究
ultrathin aluminum films were prepared by dc reactive magnetron sputtering . the target was made by 99.999 % pure aluminum 采用直流磁控溅射法溅射纯度为99.999%的铝靶制备了超薄铝膜。
in the first part of the thesis tin film in different n2 partial pressure prepared by reactive magnetron sputtering is studied 本文首先研究了磁控溅射法在不同氮气分压下所制备的tin薄膜。
the results indicate that it has an excellent surface . aln thin film was prepared from an aluminum target by dc and af reactive magnetron sputtering in nitrogen gas mixed with argon gas 氮化铝薄膜样品是利用高纯铝靶,在氮气加氩气气氛下用直流和射频反应磁控溅射法制备的。
three kinds of different methods, namely anode oxidation, micro-arc oxidation and dc reactive magnetron sputtering, were employed to treat aluminum substrate which is used for power electronic devices in order to get an insulating surface by form a layer of aluminum nitride ( aln ) or aluminum oxide ( al2o3 ) film 本文分别采用阳极氧化法、微弧氧化法和磁控反应溅射沉积氮化铝薄膜的方法对功率电子器件用金属铝基板表面进行绝缘化处理。